Radiation Effects on the Power MOSFET for
نویسندگان
چکیده
⎯The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metaloxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the onresistance for two kinds of MOSFETs (200 V and 100 V of VDSS) are tested for γ-irradiation and compared with the electrical specifications under the preand post-irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the γ-radiation facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540. Keywords⎯Radiation effect, MOSFET, threshold voltage, breakdown voltage, dose rate, total dose, γ-radiation.
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